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1. product pro?le 1.1 general description pnp low v cesat breakthrough in small signal (biss) transistor in a sot666 surface mounted device (smd) plastic package. 1.2 features n low collector-emitter saturation voltage v cesat n high collector current capability: i c and i cm n high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications n dc-to-dc conversion n mosfet gate driving n motor control n charging circuits n low power switches (e.g. motors, fans) n portable applications 1.4 quick reference data PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor rev. 01 13 june 2005 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - - 20 v i c collector current (dc) - - - 2a i cm peak collector current t p 300 m s-- - 4a r cesat collector-emitter saturation resistance i c = - 1a; i b = - 100 ma - 140 210 m w
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 2 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking 5. limiting values table 2: pinning pin description simpli?ed outline symbol 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector 123 4 5 6 4 3 1, 2, 5, 6 sym030 table 3: ordering information type number package name description version PBSS5220V - plastic surface mounted package; 6 leads sot666 table 4: marking codes type number marking code PBSS5220V n7 table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - - 20 v v ceo collector-emitter voltage open base - - 20 v v ebo emitter-base voltage open collector - - 5v i c collector current (dc) - - 2a i cm peak collector current t p 300 m s- - 4a i b base current (dc) - - 0.3 a i bm peak base current t p 300 m s- - 0.6 a p tot total power dissipation t amb 25 c [1] [4] - 300 mw [2] [4] - 500 mw [3] [4] - 900 mw t j junction temperature - 150 c
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 3 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. [4] re?ow soldering is the only recommended soldering method. t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves table 5: limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit t amb ( c) 0 160 120 40 80 006aaa424 0.4 0.8 1.2 p tot (w) 0 (1) (2) (3)
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 4 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. [4] re?ow soldering is the only recommended soldering method. table 6: thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] [4] - - 410 k/w [2] [4] - - 250 k/w [3] [4] - - 140 k/w r th(j-sp) thermal resistance from junction to solder point --80k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa425 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 5 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7: characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = - 20 v; i e =0a - - - 0.1 m a v cb = - 20 v; i e =0a; t j = 150 c -- - 50 m a i ces collector-emitter cut-off current v ce = - 20 v; v be =0v - - - 0.1 m a i ebo emitter-base cut-off current v eb = - 5 v; i c =0a - - - 0.1 m a h fe dc current gain v ce = - 2 v; i c = - 1 ma 220 495 - v ce = - 2 v; i c = - 100 ma 220 440 - v ce = - 2 v; i c = - 500 ma [1] 220 310 - v ce = - 2 v; i c = - 1a [1] 155 220 - v ce = - 2 v; i c = - 2a [1] 60 120 - v cesat collector-emitter saturation voltage i c = - 100 ma; i b = - 1ma - - 50 - 80 mv i c = - 500 ma; i b = - 50 ma [1] - - 75 - 115 mv i c = - 1 a; i b = - 50 ma [1] - - 155 - 220 mv i c = - 1 a; i b = - 100 ma [1] - - 140 - 210 mv i c = - 2 a; i b = - 100 ma [1] - - 305 - 455 mv i c = - 2 a; i b = - 200 ma [1] - - 265 - 390 mv r cesat collector-emitter saturation resistance i c = - 1 a; i b = - 100 ma [1] - 140 210 m w v besat base-emitter saturation voltage i c = - 1 a; i b = - 50 ma [1] - - 0.95 - 1.1 v i c = - 1 a; i b = - 100 ma [1] - - 1 - 1.1 v v beon base-emitter turn-on voltage v ce = - 5 v; i c = - 1a - - 0.8 - 1v t d delay time i c = - 1 a; i bon = - 50 ma; i boff =50ma -8-ns t r rise time - 34 - ns t on turn-on time - 42 - ns t s storage time - 140 - ns t f fall time - 45 - ns t off turn-off time - 185 - ns f t transition frequency v ce = - 10 v; i c = - 50 ma; f = 100 mhz 150 185 - mhz c c collector capacitance v cb = - 10 v; i e =i e =0a; f = 1 mhz -1520pf
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 6 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor v ce = - 2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c v ce = - 5v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 3. dc current gain as a function of collector current; typical values fig 4. base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 5. collector-emitter saturation voltage as a function of collector current; typical values fig 6. collector-emitter saturation voltage as a function of collector current; typical values 006aaa426 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 400 600 200 800 1000 h fe 0 (1) (2) (3) 006aaa427 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 0.6 - 0.4 - 0.8 - 1.0 v be (v) - 0.2 (1) (2) (3) 006aaa428 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 10 - 2 - 1 v cesat (v) - 10 - 3 (1) (2) (3) 006aaa429 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 10 - 2 - 1 v cesat (v) - 10 - 3 (1) (2) (3)
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 7 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c fig 7. base-emitter saturation voltage as a function of collector current; typical values fig 8. collector-emitter saturation resistance as a function of collector current; typical values t amb =25 ct amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. collector current as a function of collector-emitter voltage; typical values fig 10. collector-emitter saturation resistance as a function of collector current; typical values 006aaa430 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 0.6 - 0.8 - 0.4 - 1.0 - 1.2 v besat (v) - 0.2 (1) (2) (3) 006aaa431 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 10 1 10 2 r cesat ( w ) 10 - 1 (1) (2) (3) 006aaa432 v ce (v) 0 - 6 - 4 - 2 - 0.8 - 1.2 - 0.4 - 1.6 - 2.0 i c (a) 0 i b = - 13 ma - 10.4 ma - 11.7 ma - 9.1 ma - 6.5 ma - 3.9 ma - 5.2 ma - 2.6 ma - 1.3 ma - 7.8 ma 006aaa433 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 10 1 10 2 10 3 r cesat ( w ) 10 - 1 (1) (2) (3)
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 8 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 8. test information fig 11. biss transistor switching time de?nition i c = - 1 a; i bon = - 50 ma; i boff = 50 ma; r1 = open; r2 = 45 w ; r b = 145 w ; r c =10 w fig 12. test circuit for switching times 006aaa266 - i bon (100 %) - i b input pulse (idealized waveform) - i boff 90 % 10 % - i c (100 %) - i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 9 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 17 . fig 13. package outline sot666 dimensions in mm 04-11-08 1.7 1.5 1.7 1.5 1.3 1.1 1 0.18 0.08 0.27 0.17 0.5 pin 1 index 123 4 5 6 0.6 0.5 0.3 0.1 table 8: packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 4000 8000 PBSS5220V sot666 2 mm pitch, 8 mm tape and reel - -315 4 mm pitch, 8 mm tape and reel -115 -
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 10 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 11. soldering re?ow soldering is the only recommended soldering method. dimensions in mm fig 14. re?ow soldering footprint oi1 = 2.750 oa oi = 2.450 oa pi = 2.100 w = 0.300 cu (2x) w/2 = 0.150 cu (4x) wt = 0.375 cu (4x) pw = 0.400 (6x) ow1 = 0.550 oa (2x) solder lands 0.075 solder resist occupied area placement area msd779 obl = pbl = 1.600 oa lb = 1.200 cu la = 2.200 cu la1 = 2.500 cu obw = pbw = 2.000 oa ow = 1.700 oa e = 1.000
9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 11 of 13 philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 12. revision history table 9: revision history document id release date data sheet status change notice doc. number supersedes PBSS5220V_1 20050613 product data sheet - 9397 750 14936 -
philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 9397 750 14936 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 13 june 2005 12 of 13 13. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 15. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 16. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 17. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 13 june 2005 document number: 9397 750 14936 published in the netherlands philips semiconductors PBSS5220V 20 v, 2 a pnp low v cesat (biss) transistor 18. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 packing information. . . . . . . . . . . . . . . . . . . . . . 9 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 13 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 14 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 16 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 17 contact information . . . . . . . . . . . . . . . . . . . . 12

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